A technique is presented in which, by appropriately biasing a circular MOS capacitor surrounded by an annular electrode, it is possible to directly measure generation currents from controllably depleted surfaces. Knowledge of the surface‐generation velocity from this measurement then facilitates the correction of the usual MOS relaxation data to account for generation effects at peripheral surfaces. From the measurements presented, it is demonstrated that the technique is particularly useful for assessing state‐of‐the‐art low‐leakage devices.