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Clean, As-terminatedn-type GaAs by XPS

 

作者: S. A. Chambers,   V. A. Loebs,  

 

期刊: Surface Science Spectra  （AIP Available online 1992）
卷期: Volume 1, issue 4  

页码: 373-375

 

ISSN:1055-5269

 

年代: 1992

 

DOI:10.1116/1.1247635

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;PHOTOELECTRON SPECTROSCOPY;X RADIATION;N−TYPE CONDUCTORS;CORE LEVELS;LEED;ANNEALING;DESORPTION

 

数据来源: AIP

 

摘要:

Specimens were prepared by growing a 1μm thickn-type (4 × 1017/ cm3Si) GaAs buffer layer on GaAs(001) in a Varian Gen-II MBE chamber, followed by As capping with As4for transfer through the air. After entry into the preparation chamber associated with the XPS system, the As cap was desorbed by annealing for 5 min at 450°C in ultrahigh vacuum. The resulting surfaces were As terminated and free of contaminants, as judged by XPS, and exhibited a clear, sharpc(2 × 8)/(2 × 4) LEED pattern.

 

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