Thin films of antimony‐doped tin dioxide are deposited by dc sputtering from sintered targets containing 10, 20, and 30% Sb2O3by weight of SnO2. The concentrations of Sb, Sn, and O in the films and in the target surfaces are determined by using Auger electron spectroscopy. It is observed that the Sb content in the films depends nonlinearly upon the Sb2O3contents of the targets, and that the films become increasingly resistive with Sb2O3content beyond 10% in the target. In the films the Sb content is less than the Sn content, although the reverse is true in the case of the targets.