Twins in GaAs Crystals Grown by the Vertical Gradient Freeze Technique
作者:
H. J. Koh,
T. Fukuda,
M. H. Choi,
I. S. Park,
期刊:
Crystal Research and Technology
(WILEY Available online 1995)
卷期:
Volume 30,
issue 3
页码: 397-403
ISSN:0232-1300
年代: 1995
DOI:10.1002/crat.2170300321
出版商: WILEY‐VCH Verlag
数据来源: WILEY
摘要:
AbstractThe growth of facets and the generation of twins onVGF (vertical gradient freeze technique) grown GaAs were investigated using DSL (diluted Sirtl‐like etchant with light) photoetching and transmission X‐ray topography. Due to the polarity of the (111) plane in GaAs, As facets are larger and more irregular than Ga facets and twins always occur on As facets. Twins are initiated at the change of boundary condition which is affected by temperature gradient and crucible shape. The mechanism of twin generation is explained by considering the edge concavity at the solid‐liquid interface and the supercooling required for initial nucleation of a facet. Twins are more often produced in Si‐doped crystals than undoped ones due to the constitutional super
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