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CURRENT OSCILLATIONS IN Sip‐i‐nDEVICES AFTER IRRADIATION WITH ONE‐MeV ELECTRONS

 

作者: B. G. Streetman,   N. Holonyak,   H. V. Krone,   W. Dale Compton,  

 

期刊: Applied Physics Letters  （AIP Available online 1969）
卷期: Volume 14, issue 2  

页码: 63-65

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652714

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Current oscillations similar to those previously reported in various semiconductors with impurity‐induced traps have been observed in Si irradiated at 0°C with 1‐MeV electrons. The oscillations are altered by annealing of the devices at temperatures below 0°C.

 

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