Zinc ion implantation into GaAs0.62P0.38
作者:
Tadatsugu Itoh,
Yasuhisa Oana,
期刊:
Applied Physics Letters
(AIP Available online 1974)
卷期:
Volume 24,
issue 7
页码: 320-322
ISSN:0003-6951
年代: 1974
DOI:10.1063/1.1655200
出版商: AIP
数据来源: AIP
摘要:
The effects of dose, implantation temperatures, and annealing on the electrical properties of Zn‐implanted GaAs0.62P0.38were measured. Zinc ion implantation was performed with 20‐keV ions at temperatures between room temperature and 450 °C. The abnormal property that the effective surface concentration exceeds the implanted Zn dose was obtained for the samples implanted at room temperature.
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