Open‐circuit voltage of vertical‐junction photovoltaic devices at high intensity
作者:
Thomas W. Ekstedt,
John E. Mahan,
Robert I. Frank,
Roy Kaplow,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 5
页码: 422-423
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90408
出版商: AIP
数据来源: AIP
摘要:
Vertical single‐junction silicon photovoltaic cells show a steady increase in open‐circuit voltage with increasing incident light intensity of approximately 0.1 V per decade of intensity, up to approximately 100 W/cm2(∼1000 suns). Voltages as high as 0.76 V have been observed at 25 °C with no apparent saturation of voltage at high intensity. Measurements are presented for cells of various base doping levels. An efficiency of 19.1% has been observed at 76 W/cm2and 25 °C using an unfiltered xenon short‐arc lamp for a nonoptimized cell.
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