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Open‐circuit voltage of vertical‐junction photovoltaic devices at high intensity

 

作者: Thomas W. Ekstedt,   John E. Mahan,   Robert I. Frank,   Roy Kaplow,  

 

期刊: Applied Physics Letters  (AIP Available online 1978)
卷期: Volume 33, issue 5  

页码: 422-423

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90408

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Vertical single‐junction silicon photovoltaic cells show a steady increase in open‐circuit voltage with increasing incident light intensity of approximately 0.1 V per decade of intensity, up to approximately 100 W/cm2(∼1000 suns). Voltages as high as 0.76 V have been observed at 25 °C with no apparent saturation of voltage at high intensity. Measurements are presented for cells of various base doping levels. An efficiency of 19.1% has been observed at 76 W/cm2and 25 °C using an unfiltered xenon short‐arc lamp for a nonoptimized cell.

 

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