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DC electrical conduction in semiconducting Y1−xPrxBa2Cu3Oycompounds

 

作者: D. Rama Sita,   R. Singh,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1992)
卷期: Volume 286, issue 1  

页码: 273-275

 

ISSN:0094-243X

 

年代: 1992

 

DOI:10.1063/1.44736

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The temperature variation of D.C. electrical resistivity measured on the Y1−xPrxBa2Cu3Oysamples (x=0, 0.2, 0.4, and 0.5) show that Variable Range Hopping (VRH) is the dominant conduction mechanism in the semiconducting state of these samples below 250 K. However, we could not distinguish between the two and three dimensional (2D and 3D) VRH.

 

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