DC electrical conduction in semiconducting Y1−xPrxBa2Cu3Oycompounds
作者:
D. Rama Sita,
R. Singh,
期刊:
AIP Conference Proceedings
(AIP Available online 1992)
卷期:
Volume 286,
issue 1
页码: 273-275
ISSN:0094-243X
年代: 1992
DOI:10.1063/1.44736
出版商: AIP
数据来源: AIP
摘要:
The temperature variation of D.C. electrical resistivity measured on the Y1−xPrxBa2Cu3Oysamples (x=0, 0.2, 0.4, and 0.5) show that Variable Range Hopping (VRH) is the dominant conduction mechanism in the semiconducting state of these samples below 250 K. However, we could not distinguish between the two and three dimensional (2D and 3D) VRH.
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