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Identification of donor species in high‐purity GaAs using optically pumped submillimeter lasers

 

作者: H.R. Fetterman,   J. Waldman,   C.M. Wolfe,   G.E. Stillman,   C.D. Parker,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 21, issue 9  

页码: 434-436

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654445

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An optically pumped NH3laser has been used in conjunction with careful doping experiments in high‐purity GaAs to determine the ionization energy of isolated tin donors. The energy obtained is 5.820 meV, which corresponds to a central‐cell correction of 0.081 meV. This technique for impurity analysis is estimated to be sensitive to donor concentrations of less than 1011cm−3.

 

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