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Relation between current‐voltage characteristics and interface states at metal‐semiconductor interfaces

 

作者: C. Barret,   P. Muret,  

 

期刊: Applied Physics Letters  (AIP Available online 1983)
卷期: Volume 42, issue 10  

页码: 890-892

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93777

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In the case of metal‐covalent semiconductor interfaces, the ‘‘pinning’’ of the metal Fermi level was attributed to large densities of interface states by Bardeen, 35 years ago. These interface states are usually thought to be in equilibrium with the metal. But capacitance measurements show unambiguously the existence of states in equilibrium with the semiconductor, even for cleaved contacts. Freeouf argued recently that this kind of states would influenceI‐Vcharacteristics. Here, some examples of such a correlation between interface states spectra andI‐Vnonidealities are presented for Au‐InP and Au‐Si contacts.

 

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