AbstractThe purpose of the presented paper is to find out what kinds of information on surface layer structure of implanted silicon after rapid thermal annealing can be acquired by such non‐destructive methods as X‐ray diffractometry and its complementary RHEED technique.The experiments were performed on Si crystals implanted with Bi ions.The studies showed that using the anomalous X‐ray transmission of the wavelength of 1.54 Å we are able to determine the defect concentration introduced by ion implantation with different doses as well as the effects of defect annealing.It was also shown using the REED that the surface layer of ca. 50 Å thick remains amorphous after RTA probably due to the oxidation. The measurements by using SIMS pointed also out that at the crystal surface there was a small amount of Bi atoms accumulated af