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Memory behavior of metal‐plasma‐anodized Al2O3and SiO2‐semiconductor (MAOS) capacitors

 

作者: R.V. Pappu,   A.R. Boothroyd,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 22, issue 2  

页码: 72-74

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654561

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Fabrication details and experimental results are presented for metal‐Al2O3‐SiO2‐silicon capacitors intended as memory devices, for which the insulator layers are formed by plasma anodization. It is found that well‐controlled devices with stable characteristics may be realized by this method.

 

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