Modulation‐doped Ga0.47In0.53As/Al0.48In0.52As planar photoconductive detectors for 1.0–1.55‐&mgr;m applications
作者:
C. Y. Chen,
Y. M. Pang,
P. A. Garbinski,
A. Y. Cho,
K. Alavi,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 3
页码: 308-310
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94295
出版商: AIP
数据来源: AIP
摘要:
We demonstrate a Ga0.47In0.53As/Al0.48In0.52As modulation‐doped photoconductive detector. The detector has a built‐in electric field to separate photogenerated electron‐hole pairs. This allows the electron lifetime to be precisely determined by electrode spacings. When tested by a 200‐ps, &lgr;=1.3 &mgr;m laser pulse, the detector shows an internal gain of 18, a peak external quantum efficiency of 300%, a rise time of 80 ps, a full width at half‐maximum of 250 ps, and an internal gain‐bandwidth product of 72 GHz. Typical devices have 4‐&mgr;m spacings between electrodes and 94‐&mgr;m widths. The detector has a spectral response between 0.6 and 1.65 &mgr;m with a dip at 0.86 &mgr;m. We also measured the noise power of the detector at room temperature. With its capability to be integrated with a modulation‐doped field‐effect transistor, this detector can be useful in a monolithic integrated photoreceiver.
点击下载:
PDF
(254KB)
返 回