The epitaxial regrowth of amorphous silicon layers created by a high‐dose antimony implantation in silicon was found to be influenced by the presence of antimony atoms. At concentrations of less than 1020/cm3the regrowth rate was enhanced in comparison with undoped amorphous silicon layers. For higher antimony concentrations, however, this regrowth was retarded, while for concentrations of about 5×1021/cm3it was completely inhibited. The concentration limit above which the influence on the regrowth rate is negative appears to be an order of magnitude larger than the maximum solid solubility of the impurity atoms.