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Study of Film Thickness in rf Sputtering

 

作者: H. Ratinen,  

 

期刊: Applied Physics Letters  (AIP Available online 1972)
卷期: Volume 20, issue 12  

页码: 477-478

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654023

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The thickness of copper films prepared by the rf‐sputtering technique has been studied by changing the argon gas pressure and the distance between the target and the substrate. Glass disks with 110‐mm diameters were used as substrates. The relative thickness of a film was tested by using a laser beam. The distribution of copper was observed to be centralized as the argon gas pressure was lowered or the distance between the target and the substrate shortened. By using a proper arrangement, the film obtained was smooth enough for optical purposes.

 

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