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Effects of electropolishing on the tunneling current in aluminum‐aluminum‐oxide‐aluminum diodes

 

作者: Jovan Antula,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 22, issue 1  

页码: 1-2

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654452

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The electropolishing of Al&sngbnd;Al2O3&sngbnd;Al structures using low‐frequency (50 Hz) alternating current has been experimentally investigated. It is found that, by polishing, the tunnel film thickness could be increased up to 40&percent; without changing the electrical capacitance of the film.

 

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