Switching transients in metal-insulator (tunnel) - silicon thyristor under base voltage drive
作者:
R.B.Calligaro,
A.G.Nassibian,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1981)
卷期:
Volume 128,
issue 6
页码: 211-217
年代: 1981
DOI:10.1049/ip-i-1.1981.0052
出版商: IEE
数据来源: IET
摘要:
The transient switching characteristics of the metal-insulator (tunnel)-silicon thyristor under base voltage drive are examined. In the monostable common emitter mode measurements are carried out to establish the dependence of the turn-on delay and rise and fall times on base drive, pulsewidth and bias point. The turn-off delay time is also examined, and the results are explained qualitatively. The operation of the device in the monostable common collector mode and the bistable mode are also examined.
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