Discovery of anomalous base regions in transistors
作者:
J.F. Ziegler,
G.W. Cole,
J.E.E. Baglin,
期刊:
Applied Physics Letters
(AIP Available online 1972)
卷期:
Volume 21,
issue 4
页码: 177-179
ISSN:0003-6951
年代: 1972
DOI:10.1063/1.1654333
出版商: AIP
数据来源: AIP
摘要:
The theoretical description of transistors has been impeded by the lack of knowledge of thep‐type impurity distributions. A method is described which accurately gives concentration profiles of the boronp‐type regions in transistors. The technique has been used to establish that the base regions in the fastest bipolar transistors are markedly different than usually assumed.
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