首页   按字顺浏览 期刊浏览 卷期浏览 Short‐wavelength continuous 300‐K photopumped AlxGa1−xAs‐GaA...
Short‐wavelength continuous 300‐K photopumped AlxGa1−xAs‐GaAs quantum well heterostructure laser (&lgr;≳7270 A˚)

 

作者: H. Morkoc¸,   T. J. Drummond,   M. D. Camras,   N. Holonyak,  

 

期刊: Applied Physics Letters  （AIP Available online 1982）
卷期: Volume 40, issue 1  

页码: 18-19

 

ISSN:0003-6951

 

年代: 1982

 

DOI:10.1063/1.92903

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Data are presented demonstrating room‐temperature continuous (cw 300 K) photopumped laser operation of AlxGa1−xAs‐GaAs (x∼0.4) quantum well heterostructures (QWH) at wavelengths as short as &lgr;∼7270 A˚, or h&slash;&ohgr;−Eg(GaAs)∼280 meV. Photoexcitation levels on these six‐wellLz∼28 A˚ QWH’s have been as low as 5.6×103W/cm2orJeq∼2.3×103A/cm2, which is in a practical range for cw 300‐K diodes.

 

点击下载:  PDF (199KB)



返 回