A grain‐boundary trapping model of polycrystalline silicon film
作者:
Chih‐Yuan Lu,
Chau‐Chun Lu,
期刊:
Journal of the Chinese Institute of Engineers
(Taylor Available online 1982)
卷期:
Volume 5,
issue 2
页码: 93-98
ISSN:0253-3839
年代: 1982
DOI:10.1080/02533839.1982.9676695
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A grain‐boundary trapping model, which modifies the trapping theories Proposed by Seto and Baccarani et al., is proposed to explain the electrical transport properties of polycrystalline silicon films. The trapping capability of grain‐boundary traps, the average carrier concentration, and the width of depleted‐layer in the space‐charge region have been carefully considered and so the theory can be applied to polycrystalline silicon films of both small and large grain‐size. When three sets of experimental data with different grain sizes are compared to the theoretical curves, a good agreement is obtained.
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