Grain growth in polycrystalline silicon
作者:
G. C. Jain,
B. K. Das,
S. P. Bhattacherjee,
期刊:
Applied Physics Letters
(AIP Available online 1978)
卷期:
Volume 33,
issue 5
页码: 445-446
ISSN:0003-6951
年代: 1978
DOI:10.1063/1.90372
出版商: AIP
数据来源: AIP
摘要:
A grain‐growth study of polycrystalline silicon having small dendritic crystallites obtained by cracking SiHCl3on a hot filament has been carried out in the temperature range 1275–1375 °C. It has been observed that (1) the grain growth in the polycrystalline silicon is due to a two‐dimensional motion of grain boundaries in a plane perpendicular to the grain axis, (2) the size‐limited grain‐growth law is obeyed, and (3) the activation energy of grain growth in polycrystalline silicon is 4.62±0.23 eV, which is nearly the same as the activation energy of the diffusion of Si31in silicon.
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