首页   按字顺浏览 期刊浏览 卷期浏览 STUDY OF INHOMOGENEITIES IN GaAs USING A SCANNING ELECTRON MICROSCOPE
STUDY OF INHOMOGENEITIES IN GaAs USING A SCANNING ELECTRON MICROSCOPE

 

作者: B. R. McAvoy,   D. Green,   D. W. Ing,   R. W. Ure,  

 

期刊: Applied Physics Letters  （AIP Available online 1969）
卷期: Volume 14, issue 1  

页码: 16-18

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652639

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A scanning electron microscope was used to observe the bulk electrovoltaic effect in GaAs devices. Displays showing the distribution of inhomogeneities of carrier concentration over an area of a sample of bulk or epitaxial GaAs were produced. A correlation was found between the device performance and the inhomogeneity distribution observed in the material.

 

点击下载:  PDF (232KB)



返 回