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Channeling radiation of electrons and positrons in diamond and silicon at intermediate energies: Theory and experiment

 

作者: G.V. Dedkov,   E.Kh. Shidov,  

 

期刊: Radiation Effects  （Taylor Available online 1984）
卷期: Volume 85, issue 3  

页码: 111-116

 

ISSN:0033-7579

 

年代: 1984

 

DOI:10.1080/01422448408210072

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Both positron and electron channeling radiation peak energies corresponding to the planar channels in diamond and silicon are calculated and compared with experimental ones at particle energies of 28-56 MeV. The potential model used is an approximate form of the Hartree-Fock potential, proposed in our previous works. The obtained results are in good agreement with experiment.

 

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