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Monolithic integrated InxGa1−xAs Schottky‐barrier waveguide photodetector

 

作者: G. E. Stillman,   C. M. Wolfe,   I. Melngailis,  

 

期刊: Applied Physics Letters  （AIP Available online 1974）
卷期: Volume 25, issue 1  

页码: 36-38

 

ISSN:0003-6951

 

年代: 1974

 

DOI:10.1063/1.1655268

 

出版商: AIP

 

数据来源: AIP

 

摘要:

InxGa1−xAs Schottky‐barrier diodes for detection in the 0.9–1.06‐&mgr;m wavelength range have been incorporated in high‐purity GaAs planar waveguides using a selective epitaxial growth process. A quantum efficiency of 60% at 1.06 &mgr;m has been obtained for these detectors, and current gain has been observed.

 

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