Photoluminescence data are presented on a direct‐well GaAs1−xPx‐GaAs (x∼0.25) strained superlattice (SL) (barrierLB∼75 A˚, quantum wellLz∼75 A˚) and on indirect‐well GaP‐GaAs1−xPx(x∼0.6) strained SL’s (LB,Lz∼120 A˚ andLB,Lz∼60 A˚) grown by organometallic vapor phase epitaxy. Stimulated emission (at 300 and at 77 K) is observed in the former but only weak luminescence in the latter, thus establishing that a large density of defects at the heterointerfaces is not necessarily an issue in strained SL’s and that so far zone‐folding effects, and SL ‘‘indirect‐direct’’ conversion, have not been observed in indirect systems.