DIODES IN SILICON CARBIDE BY ION IMPLANTATION
作者:
H. L. Dunlap,
O. J. Marsh,
期刊:
Applied Physics Letters
(AIP Available online 1969)
卷期:
Volume 15,
issue 10
页码: 311-313
ISSN:0003-6951
年代: 1969
DOI:10.1063/1.1652838
出版商: AIP
数据来源: AIP
摘要:
We report here the formation ofn‐type layers with ion‐implanted nitrogen or antimony inp‐type &agr;‐SiC requiring maximum process temperatures of 1400 and 1600°C respectively for only a few minutes. This is believed to be the first confirmation of donor behavior by antimony in SiC. Electrical characteristics of these implanted layers have been evaluated by Hall and sheet resistivity measurements. Junction devices formed from the implanted layers have shown excellent forward and reverse characteristics at operating temperatures to 400°C.
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