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Hydrogen passivation of the implantation defects in MOS structures

 

作者: P. Danesh,   S.B. Kaschieva,  

 

期刊: Radiation Effects  （Taylor Available online 1984）
卷期: Volume 86, issue 2-3  

页码: 35-42

 

ISSN:0033-7579

 

年代: 1984

 

DOI:10.1080/01422448408205211

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

An a-Si:H film uas used as a hydrogen supplier for hydrogen passivation of the states introduced by ion implantation at the SiO2-Si interface. The passivation effect uas observed at annealing temperatures as low as 600 K. The comparison of the calculated quantity of hydrogen atoms reaching the interface shous a good agreement uith the density of passivated states.

 

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