Diode laser threshold current density and lasing wavelength as functions of active region thickness
作者:
W. Streifer,
D. R. Scifres,
R. D. Burnham,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 5
页码: 401-403
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93954
出版商: AIP
数据来源: AIP
摘要:
Based on a simple model of the band‐to‐band absorption of a diode laser active region, we formulatean expression for modal gain as a function of pumping current. Using this result yields expressions for threshold current density and lasing photon energy which depend on device parameters including active region thickness, laser length, internal losses, facet reflectivity, etc.
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