Bipolar microwave transistors have been fabricated using ion implantation and electron lithography, with a sputter-etched nickel-masked gold metallization process as originally developed by Herb and Labuda. The resulting devices showed the fine definition associated with the latter two technologies, together with the uniformity of electrical properties associated with ion implantation. The electrical properties of the transistors were found to be comparable to similar devices also made with ion implantation but employing conventional photolithography and electroplated gold metallization. It is suggested that the combination of technologies illustrated in the work will be generally applicable to bipolar integrated circuits.