Voigt magnetoabsorption in semiconductors at low temperature
作者:
G.P. Srivastava,
P.C. Kothari,
期刊:
Applied Physics Letters
(AIP Available online 1973)
卷期:
Volume 22,
issue 5
页码: 234-235
ISSN:0003-6951
年代: 1973
DOI:10.1063/1.1654622
出版商: AIP
数据来源: AIP
摘要:
A compensation bridge for measuring Voigt magnetoabsorption is set up forXband. Phase and amplitude measurements as a function of magnetic field are done on twon‐type Ge crystals, having resistivities of 11. 9 and 4. 1 &OHgr; cm at 89°K. The magnetic field is applied perpendicular to the direction of propagation and parallel to the microwave electric field (longitudinal case). Theoretical calculations are done by taking into account the mixed scatterings of lattice and impurities. The estimated values of the mobilities due to lattice scattering and impurity scattering are also presented.
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