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LASER RECOMBINATION TRANSITION INp‐TYPE GaAs

 

作者: J. A. Rossi,   N. Holonyak,   P. D. Dapkus,   J. B. McNeely,   F. V. Williams,  

 

期刊: Applied Physics Letters  （AIP Available online 1969）
卷期: Volume 15, issue 4  

页码: 109-110

 

ISSN:0003-6951

 

年代: 1969

 

DOI:10.1063/1.1652924

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Data are presented (77°K) showing that laser transitions to either the valence band edge or to the acceptor,or both, are possible in a specific impurity concentration range (2 × 1017−1018/cm3) in GaAs:Zn and GaAs:Cd. These data are observed on a low‐loss crystal structure that is pumped uniformly.

 

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