Hole burning spectroscopy ofR′ aggregate color centers in polycrystalline LiF thin films using a GaAlAs diode laser
作者:
Carmen Ortiz,
Carmen N. Afonso,
Peter Pokrowsky,
Gary C. Bjorklund,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 12
页码: 1102-1104
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94241
出版商: AIP
数据来源: AIP
摘要:
The first spectroscopic measurements ofR′ aggregate color centers contained in polycrystalline LiF hosts are reported. The inhomogeneous and homogeneous widths of the 830‐nm zero phonon line are measured by conventional grating spectroscopy and by photochemical hole burning spectroscopy using a current tuned GaAlAs diode laser with 3‐mW output power. An extensive photochemical hole burning comparison between single and polycrystalline samples is presented.
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