The glide mobility of dislocations in bulkn‐type InP single crystals was measured by the double‐etching method as a function of temperatures with or without 30‐keV electron beam irradiation. The mobility of &bgr; dislocations was found to be enhanced by the irradiation in such a manner that the mobility increase is caused by a decrease in the apparent activation energy, which is characteristic of recombination enhanced defect reaction phenomena. The enhancement is not much different in its magnitude from the same type of dislocations in GaAs.