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Epitaxial laser crystallization of thin‐film amorphous silicon

 

作者: J. C. Bean,   H. J. Leamy,   J. M. Poate,   G. A. Rozgonyi,   T. T. Sheng,   J. S. Williams,   G. K. Celler,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 3  

页码: 227-230

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90324

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Vapor‐deposited amorphous silicon films of 4000 A˚ thickness have been epitaxially crystallized on (100) silicon substrates by pulsed Nd : YAG laser radiation of 125‐nsec duration at power levels of 90–120 MW/cm2. The epitaxial layers were found to be defect free when examined by transmission electron microscopy and Rutherford backscattering. Patterned arrays of epitaxial crystal were produced by overlapping individual 39‐&mgr;m laser pulse spots.

 

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