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CdSnP2&sngbnd;InP heterodiodes for near‐infrared light‐emitting diodes and photovoltaic detectors

 

作者: J. L. Shay,   K. J. Bachmann,   E. Buehler,   J. H. Wernick,  

 

期刊: Applied Physics Letters  （AIP Available online 1973）
卷期: Volume 23, issue 5  

页码: 226-228

 

ISSN:0003-6951

 

年代: 1973

 

DOI:10.1063/1.1654868

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Heterodiodes have been prepared by liquid‐phase epitaxy ofn‐type CdSnP2from Sn solution ontop‐type InP. Electroluminescence is observed near 1.4 &mgr; with internal quantum efficiencies of 10% at 77°K and 1% at room temperature. The photovoltaic response of typical diodes shows moderate quantum efficiencies (4–12%) in the near infrared (1.2–1.0 &mgr;).

 

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