首页   按字顺浏览 期刊浏览 卷期浏览 Two‐Phase Stepped Oxide CCD Shift Register Using Undercut Isolation
Two‐Phase Stepped Oxide CCD Shift Register Using Undercut Isolation

 

作者: C. N. Berglund,   R. J. Powell,   E. H. Nicollian,   J. T. Clemens,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 11  

页码: 413-414

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1653996

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A novel technique for fabricating charge‐coupled devices (CCD) is described. Effectively zero lateral spacing between adjacent capacitor plates of the CCD is achieved by taking advantage of the SiO2undercutting which occurs during etching of the SiO2&sngbnd;Al2O3double insulator system.

 

点击下载:  PDF (170KB)



返 回