Amorphous layers of Si produced by the bombardment of Sb+and In+and covered with ∼400 Å of Al show pronounced migration of the implanted atoms to the Si&sngbnd;Al interface and the Al surface after a 350°C anneal. This enhanced migration occurs simultaneously with the recrystallization of the amorphous layer. Low‐temperature migration effects are not seen in uncoated amorphous Si, nor on reordered Si covered with evaporated Al. The depth distribution of the implanted atoms is measured by backscattering analysis with 280‐keV &agr; particles.