Peaked structure in field‐effect mobility of silicon MOS transistors at very low temperatures
作者:
J. A. Pals,
W. J. J. A. van Heck,
期刊:
Applied Physics Letters
(AIP Available online 1973)
卷期:
Volume 23,
issue 10
页码: 550-552
ISSN:0003-6951
年代: 1973
DOI:10.1063/1.1654745
出版商: AIP
数据来源: AIP
摘要:
Field‐effect mobility measurements on siliconn‐ andp‐channel MOS transistors at temperatures of 4.2 K and lower are reported. The measured field‐effect mobility as a function of the gate voltage shows an anomalous peaked structure superimposed on the well‐known over‐all behavior. These peaks are possibly due to statistical fluctuations within the bands of the semiconductor of the density of surface states as a function of the energy.
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