Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodes
作者:
C. A. Armiento,
S. H. Groves,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 43,
issue 2
页码: 198-200
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.94279
出版商: AIP
数据来源: AIP
摘要:
The impact ionization process in the 〈100〉, 〈110〉, and 〈111〉 crystallographic directions in InP has been investigated by analysis of photomultiplication and multiplication noise data from InP avalanche photodiodes. This is the first report of such measurements for (110)‐oriented InP and the first consistent investigation of impact ionization in the three principal crystallographic directions. Our measurements indicate that, unlike the reports for GaAs, no significant orientation dependence of the impact ionization coefficients exists in InP. Momentum‐randomizing collisions with phonons, which result in intervalley transfer of energetic electrons, are believed to be the reason for the lack of anisotropy in the electron impact ionization coefficients.
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