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Spatially resolved photoluminescence characterization and optically induced degradation of In1−xGaxAsyP1−yDH laser material

 

作者: W. D. Johnston,   G. Y. Epps,   R. E. Nahory,   M. A. Pollack,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 12  

页码: 992-994

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90265

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have observed growth‐ and processing‐related defects and optically induced degradation in In1−xGaxAsyP1−ydouble‐heterostructure material intended for 1.2–1.3‐&mgr;m laser diodes. Threshold for the degradation observed decreases with increasing layer thickness, suggesting a relation to strain arising from compositional variation during growth.

 

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