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Doping and radiation damage profiles of P+ions implanted in silicon along the [110] axis

 

作者: F. Cembali,   R. Galloni,   F. Mousty,   R. Rosa,   F. Zignani,  

 

期刊: Radiation Effects  （Taylor Available online 1974）
卷期: Volume 21, issue 4  

页码: 255-264

 

ISSN:0033-7579

 

年代: 1974

 

DOI:10.1080/00337577408232414

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Several doses of 200 KeV phosphorus ions have been implanted under channeling conditions along the [110] direction in silicon.

 

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