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Formation of Injecting and Blocking Contacts on High‐Resistivity Germanium

 

作者: G. Ottaviani,   V. Marrello,   J. W. Mayer,   M‐A. Nicolet,   J. M. Caywood,  

 

期刊: Applied Physics Letters  （AIP Available online 1972）
卷期: Volume 20, issue 8  

页码: 323-325

 

ISSN:0003-6951

 

年代: 1972

 

DOI:10.1063/1.1654169

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The behavior of Al and Sb/Ge/Sb layers evaporated on high‐purity Ge and heat treated at 280 °C is studied by reverse‐recovery, double‐injection, and nuclear‐particle‐response techniques. The results indicate that the contacts have the injection and blocking characteristics ofp‐ andn‐type material, respectively. Backscattering measurements with 1.8‐MeV4He+ions show that solid‐solid reactions occur.

 

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