首页   按字顺浏览 期刊浏览 卷期浏览 Epitaxial growth of deposited amorphous layer by laser annealing
Epitaxial growth of deposited amorphous layer by laser annealing

 

作者: S. S. Lau,   W. F. Tseng,   M‐A. Nicolet,   J. W. Mayer,   R. C. Eckardt,   R. J. Wagner,  

 

期刊: Applied Physics Letters  （AIP Available online 1978）
卷期: Volume 33, issue 2  

页码: 130-131

 

ISSN:0003-6951

 

年代: 1978

 

DOI:10.1063/1.90280

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We demonstrate that a single short pulse of laser irradiation of appropriate energy is capable of recrystallizing in open air an amorphous Si layer deposited on a (100) single‐crystal substrate into an epitaxial layer. The laser pulse annealing technique is shown to overcome the interfacial oxide obstacle which usually leads to polycrystalline formation in normal thermal annealing.

 

点击下载:  PDF (161KB)



返 回