We have achieved wide area (38 cm2) electron beam annealing of ion implanted silicon wafers using a glow discharge electron beam with electron energies between 3 and 7 keV. A continuous beam 7 cm in diameter with a power density up 90 W/cm2was used to anneal the 7‐cm‐diam central portion of boron‐implanted (30 keV, 5×1015atoms/cm2)n‐type ⟨100⟩ silicon wafers 10 cm in diameter. Annealing was obtained without redistribution of the original dopant profile using a 15‐selectron beam exposure. Due to the high electron beam power density achieved over a large area, one can uniformly anneal an entire wafer in a single exposure without sample or beam scanning.