Switching properties of inversion-controlled metal-thin insulator -Si(n)-Si(p+) devices
作者:
G.Sarrabayrouse,
J.Buxo,
J.-P.Sebaa,
A.Essaid,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1981)
卷期:
Volume 128,
issue 2
页码: 53-57
年代: 1981
DOI:10.1049/ip-i-1.1981.0019
出版商: IEE
数据来源: IET
摘要:
The paper discusses the physical conditions that must be fulfilled for switching to occur in metal-thin insulator-Si(n)-Si(p+) devices. It is shown that a necessary condition for the switching to occur is that the silicon surface at the insulator-semiconductor interface is inverted whatever is the originating mechanism that causes switching. Theoretical conclusions agree with experimental results.
点击下载:
PDF
(572KB)
返 回