High mobility in liquid phase epitaxial InGaAsP free of composition modulations
作者:
Maurice Quillec,
Jean‐Louis Benchimol,
Serge Slempkes,
Huguette Launois,
期刊:
Applied Physics Letters
(AIP Available online 1983)
卷期:
Volume 42,
issue 10
页码: 886-887
ISSN:0003-6951
年代: 1983
DOI:10.1063/1.93775
出版商: AIP
数据来源: AIP
摘要:
InxGa1−xAsyP1−yepilayers lattice matched to InP were grown from the liquid phase at temperatures far above the commonly used temperature range. The goal was to get off the unstable region corresponding to compositions emitting in the wavelength range of 1.2 &mgr;m<&lgr;<1.5 &mgr;m at 650 °C. In0.71Ga0.29As0.65P0.35(&lgr;=1.35 &mgr;m) layers thus grown have the highest electron Hall mobilities ever obtained in this material: &mgr;300 K=7000 cm2/Vs and &mgr;77 K=23 200 cm2/Vs forND−NA=8.1014cm−3. We suggest that a contribution to mobility limitation might be related to the composition modulations present in epilayers grown in the usual temperature range.
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