Continuous wave GaAlAs semiconductor laser arrays are reported to emit 585‐mW/facet cw optical output power at room temperature. The lasers operate over 100 °C with output powers in excess of 200 mW/facet cw. Laser thresholds are as low as 130 mA, differential quantum efficiencies exceed 60% for some devices, and very high total power conversion efficiencies of over 20% are observed.