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Solid phase epitaxial regrowth of amorphous silicon on molecular beam epitaxial silicon/Si layers

 

作者: A. Christou,   B. R. Wilkins,   J. E. Davey,  

 

期刊: Applied Physics Letters  （AIP Available online 1983）
卷期: Volume 42, issue 12  

页码: 1021-1023

 

ISSN:0003-6951

 

年代: 1983

 

DOI:10.1063/1.93827

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The recrystallization and epitaxial regrowth of amorphous silicon layers on molecular beam epitaxial (MBE) silicon at 650 °C is described. MBE silicon layers were deposited at 650 °C followed by deposition of amorphous layers at 100–400 °C. Subsequent solid phase epitaxial regrowth of these layers has been achieved at 650 °C.

 

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