On amorphous layer formation in silicon by ion implantation
作者:
J.C. Bourgoin,
J.F. Morhange,
R. Beserman,
期刊:
Radiation Effects
(Taylor Available online 1974)
卷期:
Volume 22,
issue 3
页码: 205-208
ISSN:0033-7579
年代: 1974
DOI:10.1080/10420157408230781
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The introduction of disorder in silicon caused by the implantation of 70 keV argon ions has been studied using electron paramagnetic resonance and Raman scattering. It is observed that the EPR signal is not saturated when the crystalline structure (as seen by Raman scattering) has totally disappeared. The disorders measured using these two methods are compared with each other and with previously published data. It is concluded that when the saturation of the disorder is observed, it is not possible to assert that a continuous amorphous layer is formed because this saturation is not independent of the experimental technique used. It is also shown that Raman scattering can be a useful and precise technique to monitor the introduction of disorder within an implanted layer.
点击下载:
PDF (314KB)
返 回