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Re-Investigation of the Raman Spectrum of D2+Bombarded Si Surface

 

作者: M.S. Mathur,   V.P. Derenchuk,   J.S. C. McKee,  

 

期刊: Spectroscopy Letters  （Taylor Available online 1984）
卷期: Volume 17, issue 3  

页码: 181-195

 

ISSN:0038-7010

 

年代: 1984

 

DOI:10.1080/00387018408062677

 

出版商: Taylor & Francis Group

 

关键词: Raman Scattering from implanted silicon

 

数据来源: Taylor

 

摘要:

The Raman spectrum of the surface of a P-type silicon wafer bombarded with 30 KeV D2+has been re-investigated. The recorded spectrum not only confirms the formation of a-Si layer and various silicon, deuterium and hydrogen complexes, but enables the identification of others.

 

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